# US 2019/0314766 A1 · Formation of Diamond Membranes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0314766 A1 - Document ID: US20190314766A1 - Status: Published application - Kind: A1 - Application number: 16/385,412 - Filed: 2019-04-16 - Published: 2019-10-17 - Earliest claimed: 2018-04-16 - Assignees: Imec Vzw; Universiteit Hasselt - Applicants: Imec Vzw; Universiteit Hasselt - Inventors: Rajesh Ramaneti; Giedrius Degutis; Ken Haenen; Marlies Van Bael; Paulius Pobedinskas - Web page: https://patentgrep.com/patent/US20190314766A1 ## CPC - B01D 67/0051: {by controlled crystallisation, e,.g. hydrothermal growth} - B01D 67/0062: {by micromachining techniques, e.g. using masking and etching steps, photolithography} - B01D 67/0072: {by deposition from the gaseous phase, e.g. sputtering, CVD, PVD} - B01D 69/02: characterised by their properties - B01D 71/021: {Carbon} - C23C 16/274: {using microwave discharges} - H10D 84/0167: {Manufacturing their channels} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10P 14/61: using masks - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]} - B01D 69/105: {Support pretreatment} - B01D 2323/34: Use of radiation - B01D 2323/64: Use of a temporary support - B01D 2325/02: Details relating to pores or porosity of the membranes - B01D 2325/08: Patterned membranes - B01D 2325/26: Electrical properties - B01D: SEPARATION (separating solids from solids by wet methods B03B, B03D; by pneumatic jigs or tables B03B; by other dry methods B07; magnetic or electrostatic separation of solid materials from solid materials or fluids, separation by high-voltage electric fields B03C; centrifuges, vortex apparatus B04; presses per se for squeezing-out liquid from liquid-containing material B30B9/02; treatment of water C02F, e.g. softening by ion-exchange C02F1/42; {arrangements of air intake cleaners in gas turbine plants F02C7/05} ; arrangements or mounting of filters in air-conditioning, air-humidification or ventilation F24F13/28) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a first aspect, the present disclosure relates to a method for forming a diamond membrane, comprising: providing a substrate having an amorphous dielectric layer thereon, the amorphous dielectric layer comprising an exposed surface, the exposed surface having an isoelectric point of less than 7, preferably at most 6; seeding diamond nanoparticles onto the exposed surface; growing a diamond layer from the seeded diamond nanoparticles; and removing a portion of the substrate from underneath the diamond layer, the removed portion extending at least up to the amorphous dielectric layer, thereby forming the diamond membrane over the removed portion. ## Claims ### Claim 1 A method for forming a diamond membrane, comprising: providing a substrate having an amorphous dielectric layer thereon, the amorphous dielectric layer comprising an exposed surface, the exposed surface having an isoelectric point of less than 7; seeding diamond nanoparticles onto the exposed surface; growing a diamond layer from the seeded diamond nanoparticles; and removing a portion of the substrate from underneath the diamond layer, the removed portion extending at least up to the amorphous dielectric layer, thereby forming the diamond membrane over the removed portion. ### Claim 2 (depends on 1) The method according to claim 1, wherein removing a portion of the substrate from underneath the diamond layer further comprises removing a portion of the amorphous dielectric layer, such that the removed portion extends up to the diamond layer. ### Claim 3 (depends on 1) The method according to claim 1, further comprising patterning the seeded diamond nanoparticles by removing the diamond nanoparticles in a first area but not in a second area. ### Claim 4 (depends on 3) The method according to claim 3, wherein patterning the seeded diamond nanoparticles comprises: providing a mask layer over the seeded diamond nanoparticles; patterning at least one opening into the mask layer; and removing the seeded diamond nanoparticles within the at least one opening. ### Claim 5 (depends on 3) The method according to claim 3, wherein patterning the seeded diamond nanoparticles comprises using a maskless lithography technique. ### Claim 6 (depends on 1) The method according to claim 1, wherein step providing a substrate having an amorphous dielectric layer thereon comprises: providing the amorphous dielectric layer on the substrate, the amorphous dielectric layer having an isoelectric point of at least 7; and applying a surface treatment to the exposed surface, thereby modifying the isoelectric point of the exposed surface to be less than 7. ### Claim 7 (depends on 6) The method according to claim 6, wherein the surface treatment comprises a halogenation. ### Claim 8 (depends on 1) The method according to claim 1, wherein growing a diamond layer from the seeded diamond nanoparticles comprises use of a chemical vapor deposition. ### Claim 9 (depends on 1) The method according to claim 1, wherein a carbon-containing auxiliary layer overlays the seeded diamond nanoparticles before the growing of the diamond layer from the seeded diamond nanoparticles and wherein the carbon-containing auxiliary layer acts as a carbon-source during the growing of the diamond layer from the seeded diamond nanoparticles. ### Claim 10 (depends on 1) The method according to claim 1, wherein the diamond layer is a doped diamond layer. ### Claim 11 (depends on 1) The method according to claim 1, wherein the amorphous dielectric layer is a high-k dielectric, preferably Al2O3, HfO2, or MgO. ### Claim 12 (depends on 1) The method according to claim 1, wherein the exposed surface has a negative zeta potential. ### Claim 13 (depends on 12) The method according to claim 12, wherein the exposed surface is in contact with a medium having a pH higher than the isoelectric point of the exposed surface during seeding diamond nanoparticles onto the exposed surface. ### Claim 14 A diamond membrane obtained by a method comprising: providing a substrate having an amorphous dielectric layer thereon, the amorphous dielectric layer comprising an exposed surface, the exposed surface having an isoelectric point of less than 7; seeding diamond nanoparticles onto the exposed surface; growing a diamond layer from the seeded diamond nanoparticles; and removing a portion of the substrate from underneath the diamond layer, the removed portion extending at least up to the amorphous dielectric layer, thereby forming the diamond membrane over the removed portion.