Magnetoresistance effect device
AssigneeTDK Corporation
InventorsNaomichi DEGAWA, Tsuyoshi SUZUKI
Life of this patent
Estimating the term…
Abstract
Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
Claims3
A magnetoresistance effect device comprising:
- a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer;
- and
- a high-frequency signal line,
- wherein in the magnetoresistance effect element, the first ferromagnetic layer, the second ferromagnetic layer, and the spacer layer are stacked such that the spacer layer is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- the high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction, and
- at least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
Dependencies are inferred from the claim text.