Method for manufacturing optical semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTsutomu YAMAGUCHI
Life of this patent
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Abstract
A ridge structure (9) having a ridge lower part (6), a ridge upper part (8) above the ridge lower part (6) and having a larger width than the ridge lower part (6), is formed on a semiconductor substrate (1). A recess (11) of the ridge structure (9), where the ridge lower part (6) is laterally set back from the ridge upper part (8) due to a difference in width between the ridge upper part (8) and the ridge lower part t (6), is completely filled with an insulating film (10) by an atomic layer deposition method to form a protrusion (19) from the semiconductor substrate (1), the ridge structure (9), and the insulating film (10) without any step in a side face of the protrusion (19).
Claims20
A method for manufacturing an optical semiconductor device comprising:
- forming a ridge structure having a ridge lower part, a ridge upper part above the ridge lower part and having a larger width than the ridge lower part, on a semiconductor substrate;
- and
- completely filling a recess of the ridge structure, where the ridge lower part is laterally set back from the ridge upper part due to a difference in width between the ridge upper part and the ridge lower part, with an insulating film by an atomic layer deposition method to form a protrusion from the semiconductor substrate, the ridge structure, and the insulating film without any step in a side face of the protrusion.
Dependencies are inferred from the claim text.