Memory device

A memory device comprising:

• a first conductive layer extending in a first direction;
• a second conductive layer extending in the first direction;
• a third conductive layer extending in a second direction intersecting the first direction;
• an insulating layer provided between the first conductive layer and the second conductive layer, the insulating layer including aluminum oxide;
• a first insulating film including a first region and a second region, the first region located between the first conductive layer and the third conductive layer, the first region including hafnium oxide whose main crystal structure is orthorhombic, the second region located between the insulating layer and the third conductive layer, and the second region including hafnium oxide whose main crystal structure is crystal structure other than orthorhombic;
• and
• a second insulating film provided between the first insulating film and the third conductive layer, the second insulating film including paraelectrics and not including aluminum oxide.

A memory device comprising:

• a first conductive layer extending in a first direction;
• a second conductive layer extending in the first direction;
• a third conductive layer extending in a second direction intersecting the first direction;
• an insulating layer provided between the first conductive layer and the second conductive layer, the insulating layer including aluminum oxide;
• a first insulating film including a first region and a second region, the first region located between the first conductive layer and the third conductive layer, the first region including hafnium oxide whose main crystal structure is orthorhombic, the second region located between the insulating layer and the third conductive layer, and the second region including hafnium oxide whose main crystal structure is crystal structure other than orthorhombic;
• a second insulating film provided between the first insulating film and the third conductive layer, the second insulating film not including aluminum oxide;
• and
• a multi-layered insulator provided between the first conductive layer and the first insulating film or between the second insulating film and the third conductive layer, wherein
• the multi-layered insulator has a first layer, a second layer, and a third layer,
• the second layer is located between the first layer and the third layer,
• electron affinity of the first layer is larger than electron affinity of the second layer, and
• the electron affinity of the second layer is larger than electron affinity of the third layer.