Resistance-change type memory device
AssigneeToshiba Memory Corporation
InventorsKouji MATSUO, Ryo FUKUOKA, Yuta YAMADA
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Abstract
A resistance-change type memory device includes a substrate, a plurality of electrodes arranged in a first direction parallel to an upper surface of the substrate and extending in a second direction intersecting the upper surface, a resistance-change film provided in a third direction that is parallel to the upper surface and intersects the first direction as viewed from the plurality of electrodes, a semiconductor film provided between the plurality of electrodes and the resistance-change film, and an insulating film provided between the plurality of electrodes and the semiconductor film. The resistance-change film has a resistance value that changes when a current flows therein.
Claims15
A resistance-change type memory device comprising:
- a substrate;
- a plurality of electrodes arranged in a first direction parallel to an upper surface of the substrate and extending in a second direction intersecting the upper surface;
- a resistance-change film provided in a third direction that is parallel to the upper surface and intersects the first direction when viewed from the plurality of electrodes, the resistance-change film having a resistance value that changes when a current flows therein;
- a semiconductor film provided between the plurality of electrodes and the resistance-change film;
- and
- an insulating film provided between the plurality of electrodes and the semiconductor film.
A resistance-change type memory device comprising:
- a substrate;
- and
- a plurality of first structures and a plurality of second structures provided on the substrate and alternately arranged in a first direction parallel to an upper surface of the substrate,
- wherein each of the first structures includes a first columnar body and a second insulating columnar body arranged alternately in a second direction that is parallel to the upper surface and intersects the first direction,
- a position of the first columnar body of one of two adjacent first structures in the second direction is equal to a position of the second columnar body of a remaining one of the two adjacent first structures in the second direction,
- each of the second structures includes a first insulating film and a first film alternately stacked in a third direction intersecting the upper surface and extending in the second direction,
- the first columnar body includes:
- a first electrode extending in the third direction;
- and
- a second insulating film provided between the first electrode and the first film, and
- the first film includes:
- a single semiconductor film extending in the second direction;
- and
- a plurality of resistance-change film provided between the semiconductor film and the second columnar body and having a resistance value that changes when a current flows therein.
A resistance-change type memory device comprising:
- a substrate;
- and
- a structure provided on the substrate and extending in a first direction parallel to an upper surface of the substrate,
- wherein the structure includes:
- a plurality of electrodes extending in a second direction intersecting the upper surface of the substrate and arranged in the first direction;
- a semiconductor film provided around each of the plurality of electrodes when viewed from the second direction, and formed continuously around the plurality of electrodes;
- a first insulating film provided between each of the plurality of electrodes and the semiconductor film;
- and
- a resistance-change film provided around the semiconductor film as viewed from the second direction, and connected to the semiconductor film so as to have a resistance value that changes when a current flows therein.
A resistance-change type memory device comprising:
- an electrode group in which a plurality of electrode pairs, each being formed of two electrodes that extend in a first direction and are adjacent to each other in a second direction intersecting the first direction, are arranged in a third direction intersecting the first direction and the second direction;
- a resistance-change film that is provided in a region on a lateral surface of an electrode not facing the other electrode belonging to the same electrode pair and has a resistance value that changes when a current flows therein;
- a semiconductor film provided between the electrode and the resistance-change film;
- an insulating film provided between the electrode and the semiconductor film;
- and
- a conductive film provided between adjacent electrode pairs and connected between adjacent semiconductor films.
Dependencies are inferred from the claim text.