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US 2019/0296231 A1Published application
Method for fabrication of a cem device
AssigneeArm Limited
InventorsMing HE, Paul Raymond BESSER
Life of this patent
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AssigneeArm Limited
InventorsMing HE, Paul Raymond BESSER
Estimating the term…
Disclosed is a method for the fabrication of a correlated electron material (CEM) device comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a trench in the cover layer whereby to expose the conductive overlay; and the method further comprises treating the exposed conductive overlay to remove an oxidation layer there from.
A method for the fabrication of a correlated electron material (CEM) device comprising:
An integrated circuit having a CEM device comprising a conductive substrate, a CEM layer and a conductive overlay wherein the device is provided between an upper metal interconnect provided in a cover layer and a lower metal interconnect provided in a substrate, the upper metal interconnect and the conductive overlay having a trench contact, wherein the contacting surface of the conductive overlay is substantially free from an oxidation layer.
An integrated circuit having a CEM device comprising a conductive substrate, a CEM layer and a conductive overlay wherein the device is provided between an upper metal interconnect provided in a cover layer and a lower metal interconnect provided in a substrate, the upper metal interconnect and the conductive overlay having a trench contact and the lower metal interconnect and the conductive substrate having a via contact, wherein the device has a moisture barrier layer on substantially the whole of the sidewalls of the conductive substrate and the CEM layer and on the sidewalls of the conductive overlay below and up to the trench contact.
An electronic device comprising an integrated circuit having a CEM device comprising a conductive substrate, a CEM layer and a conductive overlay wherein the device is provided between an upper metal interconnect provided in a cover layer and a lower metal interconnect provided in a substrate, the upper metal interconnect and the conductive overlay having a trench contact, wherein the contacting surface of the conductive overlay is substantially free from an oxidation layer.
An electronic device comprising an integrated circuit having a CEM device comprising a conductive substrate, a CEM layer and a conductive overlay wherein the device is provided between an upper metal interconnect provided in a cover layer and a lower metal interconnect provided in a substrate, the upper metal interconnect and the conductive overlay having a trench contact and the lower metal interconnect and the conductive substrate having a via contact, wherein the device has a moisture barrier layer on substantially the whole of the sidewalls of the conductive substrate and the CEM layer and on the sidewalls of the conductive overlay below and up to the trench contact.
Dependencies are inferred from the claim text.