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US 2019/0296228 A1Published application
Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
AssigneeSpin Transfer Technologies, Inc.
InventorSatoru Araki
Life of this patent
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Abstract
A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.
Claims20
A device comprising:
- a first plurality of annular structures, each annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a first planar reference magnetic layer disposed about the first plurality of annular structures and separated from the free magnetic layers of the first plurality of annular structures by the annular tunnel barrier layers of the first plurality of annular structures;
- a first non-magnetic insulator layer disposed about the first plurality of annular structures and on a first side of the first planar reference magnetic layer;
- a second non-magnetic insulator layer disposed about the first plurality of annular structures and on a second side of the first planar reference magnetic layer;
- a second plurality of annular structures axially aligned with respective ones the first plurality of annular structures;
- a second planar reference magnetic layer disposed about the second plurality of annular structures and separated from the free magnetic layer of the second plurality of annular structures by the annular tunnel barrier layers of the second plurality of annular structures;
- a third non-magnetic insulator layer disposed about the second plurality of annular structures and between the second non-magnetic insulator layer and a first side of the second planar reference magnetic layer;
- and
- a fourth non-magnetic insulator layer disposed about the second plurality of annular structures and on a second side of the second planar reference magnetic layer.
6 more elements
The device of claim 9, wherein,
- the magnetic field of the annular free magnetic layer of each of the first plurality of annular structures is configured to switch to being substantially parallel to the magnetic field of the first planar reference layer in response to a current flow in a first direction through the conductive annular layer of the first plurality annular structures and to switch to being substantially anti-parallel to the magnetic field of the first planar reference layer in response to a current flow in a second direction through the conductive annular layer of the first plurality of annular structures;
- and
- the magnetic field of the annular free magnetic layer of each of the second plurality of annular structures is configured to switch to being substantially parallel to the magnetic field of the second planar reference layer in response to a current flow in a first direction through the conductive annular layer of the second plurality annular structures and to switch to being substantially anti-parallel to the magnetic field of the second planar reference layer in response to a current flow in a second direction through the conductive annular layer of the second plurality of annular structures.
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells including;
- a first plurality of annular structures arranged in columns and rows, each annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a first planar reference magnetic layer disposed about the first plurality of annular structures and separated from the free magnetic layers of the first plurality of annular structures by the annular tunnel barrier layers of the first plurality of annular structures;
- a first non-magnetic insulator layer disposed about the first plurality of annular structures and on a first side of the first planar reference magnetic layer;
- a second non-magnetic insulator layer disposed about the first plurality of annular structures and on a second side of the first planar reference magnetic layer;
- a second plurality of annular structures axially aligned with respective ones the first plurality of annular structures;
- a second planar reference magnetic layer disposed about the second plurality of annular structures and separated from the free magnetic layer of the second plurality of annular structures by the annular tunnel barrier layers of the second plurality of annular structures;
- a third non-magnetic insulator layer disposed about the second plurality of annular structures and between the second non-magnetic insulator layer and a first side of the second planar reference magnetic layer;
- and
- a fourth non-magnetic insulator layer disposed about the second plurality of annular structures and on a second side of the second planar reference magnetic layer.
7 more elements
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells arranged in cell columns and cell rows in a plurality of cell levels, wherein the MTJ cells in corresponding cell column and cell row positions in the plurality of cell levels are coupled together in cell strings, each MTJ cell includes;
- an annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a portion of a respective planar reference magnetic layer disposed about the annular structure;
- a portion of a respective planar non-magnetic insulator layer disposed on a first side of the planar reference magnetic layer and about the annular structure;
- a portion of another respective planar non-magnetic insulator layer disposed on a second side of the planar reference magnetic layer and about the annular structure;
- and
- a plurality of select elements arranged in select columns and select rows, wherein respective selector elements are coupled to respective strings of MTJ cells in corresponding cell column and cell row positions.
4 more elements
The memory device of claim 18, further comprising:
- a plurality of blocks of the array of MTJ cells arranged in block columns and block rows.
Dependencies are inferred from the claim text.