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US 2019/0296227 A1Published application
Semiconductor device
AssigneeAblic Inc.
InventorsTakaaki HIOKA, Tomoki HIKICHI
Life of this patent
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Abstract
The semiconductor device includes a vertical Hall element that is provided in a first region of a semiconductor substrate and has a plurality of first electrodes, and a resistive element that is provided in a second region different from the first region in the semiconductor substrate and has a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes are connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven using a spinning current method.
Claims8
A semiconductor device, comprising:
- a vertical Hall element provided in a first region of a semiconductor substrate and having a plurality of first electrodes;
- and
- a resistive element provided in a second region different from the first region of the semiconductor substrate and having a plurality of second electrodes,
- the plurality of first electrodes and the plurality of second electrodes being connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven by a spinning current method.
1 more element
Dependencies are inferred from the claim text.