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US 2019/0296221 A1Published application
Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Discontinued Free Magnetic Layer and a Planar Reference Magnetic Layer
AssigneeSpin Transfer Technologies, Inc.
InventorSatoru Araki
Life of this patent
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Abstract
A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.
Claims18
A device comprising:
- a plurality of annular structures, each annular structure including a annular non-magnetic layer disposed about an annular conductive layer, a first annular free magnetic layer and a second annular free magnetic layer disposed about the annular non-magnetic layer, the first and second annular free magnetic layers separated by a non-magnetic separator layer and an annular tunnel insulator disposed about the plurality of annular free magnetic layers and the non-magnetic separator layer;
- a first planar reference magnetic layer disposed about the plurality of annular structures and separated from the free magnetic layers of the plurality of annular structures by the annular tunnel barrier layer of the plurality of annular structures and the first planar reference magnetic layer aligned with the first annular free magnetic layer;
- a first non-magnetic insulator layer disposed about the plurality of annular structures and on a first side of the first planar reference magnetic layer;
- a second non-magnetic insulator layer disposed about the plurality of annular structures and on a second side of the first planar reference magnetic layers,
- a second planar reference magnetic layer disposed about the plurality of annular structures and separated from the free magnetic layers of the plurality of annular structures by the annular tunnel barrier layers of the plurality of annular structures, and the second planar reference magnetic layer aligned with the second annular free magnetic layer;
- a third non-magnetic insulator layer disposed about the plurality of annular structures and between the second non-magnetic insulator layer and a first side of the second planar reference magnetic layer;
- and
- a fourth non-magnetic insulator layer disposed about the plurality of annular structures and on a second side of the second planar reference magnetic layer.
5 more elements
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells including;
- a plurality of annular structures arranged in columns and rows, each annular structure including an annular non-magnetic layer disposed about an annular conductive layer, a plurality of annular free magnetic layers disposed about the annular non-magnetic layer, the plurality of annular free magnetic layers separated from each other by corresponding ones of a plurality of non-magnetic separator layers, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a plurality of planar reference magnetic layers disposed about the plurality of annular tunnel barrier layers and aligned with corresponding ones of the plurality of portions of the free magnetic layers;
- a first plurality of non-magnetic insulator layers disposed about the plurality of annular structures and on a first side of the plurality of planar reference magnetic layers;
- and
- a second plurality of non-magnetic insulator layers disposed about the first plurality of annular structures and an a second side of the plurality of planar reference magnetic layers;
- and
- a planar non-magnetic conductive layer disposed between adjacent ones of the first plurality of non-magnetic insulator layers and the second plurality of non-magnetic insulator layers.
5 more elements
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells arranged in cell columns and cell rows in a plurality of cell levels, wherein the MTJ cells in corresponding cell column and cell row positions in the plurality of cell levels are coupled together in cell strings, the MTJ cells in each cell string include;
- an annular structure including an annular non-magnetic layer disposed about an annular conductive layer, a plurality of annular free magnetic layers disposed about the annular non-magnetic layer, the annular free magnetic layer separated from each other by corresponding ones of a plurality of non-magnetic separator layers, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a portion of corresponding ones of planar reference magnetic layers disposed about the annular structure and aligned with a corresponding ones of the plurality of portions of the free magnetic layer;
- a portion of one or more planar non-magnetic insulator layers disposed on a first side of each of the plurality of planar reference magnetic layer and about the annular structure;
- a portion of one or more other planar non-magnetic insulator layers disposed on a second side of each of the plurality of planar reference magnetic layer and about the annular structure:
- and
- a plurality of select elements arranged in select columns and select rows, wherein respective selector elements are coupled to respective strings of MTJ cells in corresponding cell column and cell row positions,
4 more elements
Dependencies are inferred from the claim text.