Method for manufacturing semiconductor device and semiconductor device
AssigneeNichia Corporation
InventorsYoshinori MIYAMOTO, Tokutaro OKABE, Yuya KAGOSHIMA, Keisuke HIGASHITANI, Chiaki OZAKI
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Abstract
A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- preparing a wafer comprising sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region;
- and
- forming a semiconductor layer at the upper surface, the semiconductor layer comprising at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).
A method for manufacturing a semiconductor device, the method comprising:
- preparing a wafer comprising sapphire, the wafer having an upper surface that includes a first region, a second region extending around the first region, and a trench surrounding the first region and located between the first region and the second region, a depth of the trench being 2 μm or more;
- and
- forming a semiconductor layer at the upper surface, the semiconductor layer comprising at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).
A semiconductor device, comprising:
- a wafer comprising sapphire, the wafer having an upper surface, the upper surface including a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region;
- and
- a semiconductor layer located at the upper surface, the semiconductor layer comprising at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).
A semiconductor device, comprising:
- a wafer comprising sapphire, the wafer having an upper surface, the upper surface including a first region, a second region extending around the first region, and a trench surrounding the first region and located between the first region and the second region, a depth of the trench being 2 μm or more;
- and
- a semiconductor layer provided at the upper surface, the semiconductor layer comprising at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).
Dependencies are inferred from the claim text.