Micro light-emitting diode chip
AssigneePlayNitride Display Co., Ltd.
InventorsYu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin, Yun-Li Li
Life of this patent
Estimating the term…
Loading patent…
AssigneePlayNitride Display Co., Ltd.
InventorsYu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin, Yun-Li Li
Estimating the term…
A μLED chip having at least two light-emitting regions and including an epitaxial structure layer, a first-type electrode and at least two second-type electrodes is provided. The epitaxial structure layer includes a first-type semiconductor layer, at least two light-emitting layers and at least two second-type semiconductor layers. The light-emitting layers are respectively located in the light-emitting regions, one of the light-emitting layers has a first area, and the other light-emitting layer has a second area. A ratio of the first area to the second area is between 1.5 and 3, and a difference in current densities respectively passing through the at least two light-emitting regions is less than 10%. The light-emitting layers are located between the first-type semiconductor layer and the second-type semiconductor layers. The first-type electrode is electrically connected to the first-type semiconductor layer. The second-type electrodes are electrically connected to the second-type semiconductor layer, respectively.
A micro light-emitting diode chip having at least two light-emitting regions and comprising:
Dependencies are inferred from the claim text.