Aluminum gallium arsenide and indium gallium phosphide power converter on silicon

A semiconductor structure comprising:

• a silicon-on-insulator structure;
• a first bottom contact layer located above the silicon-on-insulator structure, wherein the first bottom contact layer is comprised of indium gallium phosphide;
• second bottom contact layer located on the first bottom contact layer, wherein the second bottom contact layer is comprised of zinc gallium-arsenide;
• a back surface and absorption layer located on the second bottom contact layer, wherein the back surface and absorption layer is comprised of zinc aluminum-gallium-arsenide;
• a first absorption layer located on the back surface and absorption layer, wherein the first absorption layer is comprised of zinc aluminum-gallium-arsenide;
• a second absorption layer located on the first absorption layer, wherein the second absorption layer is comprised of not intentionally doped (NID) aluminum-gallium-arsenide;
• a third absorption layer located on the second absorption layer, wherein the third absorption layer is comprised of silicon aluminum-gallium-arsenide;
• a window and absorption layer located on the third absorption layer, wherein the window and absorption layer is comprised of silicon aluminum-gallium-arsenide;
• and
• a top contact layer located on the window and absorption layer, wherein the top contact layer is comprised of silicon gallium-arsenide.