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US 2019/0296180 A1Published application
Photovoltaic devices including doped semiconductor films
AssigneeFirst Solar, Inc.
InventorsAnke Abken, Markus Gloeckler, Roger Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick Powell
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Abstract
A photovoltaic cell can include a dopant in contact with a semiconductor layer.
Claims20
A method for forming an absorber layer of a photovoltaic cell comprising:
- depositing the absorber layer, wherein the absorber layer comprises a mixture of CdTe and at least one semiconductor selected from the group consisting of ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, MnO, MnS, MnTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TIN, TlP, TlAs, and TlSb;
- applying a flux solution to a surface of the absorber layer, wherein the flux solution comprises CdCl2 and a chloride compound, and wherein the chloride compound comprises a Group I element;
- heat treating the absorber layer with the flux solution;
- and
- introducing a P-type dopant into the absorber layer at a concentration greater than 0.5 ppma.
2 more elements
A photovoltaic cell comprising:
- a transparent conductive layer;
- a semiconductor absorber layer over the transparent conductive layer, wherein the semiconductor absorber layer comprises a mixture of CdTe and CdSe, doped p-type with a chloride compound comprising a Group I element and a Group V element, wherein a concentration of the Group V element in the semiconductor absorber layer is greater than 0.5 ppma.
Dependencies are inferred from the claim text.