Thin-film photovoltaic device and associated method of fabrication

2:

• The device according to claim 1, wherein the second electrical contact and the first electrical contact are structured in an interleaved manner.

3:

• The device according to claim 1, wherein the second electrical contact comprises each of the layers of the first electrical contact.

4:

• The device according to claim 1, wherein the absorber covers side faces and an upper face of the first electrical contact.

5:

• The device according to claim 1, wherein the second electrical contact further comprises a material selected among:
• 316L stainless steel, an alloy of Fe—Cr—Ni—Mo, Ni—Mo—P, MoO2, ZnO, SnO2, aluminum-doped ZnO, fluorine-doped tin oxide FTO, steels containing carbon and manganese, compounds based on cobalt and phosphorus.

6:

• The device according to claim 1, wherein the photovoltaic device is a light-concentrating device.

8:

• The method according to claim 7, further comprising:
• forming the second electrically conductive thin layer by etching the first electrical contact.

9:

• The method according to claim 7, further comprising:
• forming the first and second electrical contacts such that the second electrical contact and the first electrical contact are structured in an interleaved manner.

10:

• The method according to claim 7, further comprising:
• forming the first and second electrical contacts such that the second electrical contact is spaced apart from the first electrical contact by a distance substantially equal to or greater than a thickness of the absorber.

12:

• The method according to claim 7, further comprising:
• forming a corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, on the second electrical contact.

13:

• The method according to claim 12, further comprising:
• forming the corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, by a technique selected among:
• electrodeposition, thermal oxidation in an oxidizing atmosphere of a conductive layer of the second electrical contact, electrochemical oxidation of a conductive layer of the second electrical contact.

14:

• The method according to claim 12, further comprising:
• treating the corrosion-resistant, electrically conductive material that is stable in selenization or sulfurization, by adding phosphorus.

15:

• The method according to claim 7, further comprising:
• depositing an electrically conductive layer on the second electrical contact, subsequent to an annealing step.