Vertical gallium nitride schottky diode

A nitride-based Schottky diode, comprising:

• a nitride-based semiconductor body of a first conductivity type;
• a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode;
• a cathode electrode in electrical contact with the nitride-based semiconductor body;
• and
• a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising:
• a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer;
• and
• a dielectric field plate formed on a top surface of the nitride-based epitaxial layer;
• and
• a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body,
• wherein the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky junction of the Schottky diode.

A nitride-based Schottky diode, comprising:

• a nitride-based semiconductor body of a first conductivity type;
• a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode;
• a cathode electrode in electrical contact with the nitride-based semiconductor body;
• and
• a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising:
• a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer;
• and
• a dielectric field plate formed on a top surface of the nitride-based epitaxial layer and having an end that is recessed from an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode.