Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo SHIMIZU
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Abstract
A semiconductor device according to an embodiment includes a first electrode; a second electrode; a silicon carbide layer disposed between the first electrode and the second electrode; a first n-type silicon carbide region disposed in the silicon carbide layer; and a first nitrogen region disposed in the silicon carbide layer, the first nitrogen region disposed between the first n-type silicon carbide region and the first electrode, and the first nitrogen region having a first nitrogen concentration higher than a first n-type impurity concentration of the first n-type silicon carbide region.
Claims19
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- a silicon carbide layer disposed between the first electrode and the second electrode;
- a first n-type silicon carbide region disposed in the silicon carbide layer;
- and
- a first nitrogen region disposed in the silicon carbide layer, the first nitrogen region disposed between the first n-type silicon carbide region and the first electrode, and the first nitrogen region having a first nitrogen concentration higher than a first n-type impurity concentration of the first n-type silicon carbide region.
A method of manufacturing a semiconductor device, the method comprising:
- performing first heat treatment to a silicon carbide layer to form a first nitrogen region containing nitrogen, the first heat treatment being performed at a temperature between 1300° C. and 1500° C. in an N2 gas with an oxygen partial pressure of 0.1 ppm or less, the silicon carbide layer having a first plane and a second plane, the silicon carbide layer having a first n-type silicon carbide region, and the first heat treatment being performed with the first plane exposed;
- forming a first electrode on the first plane after the performing the first heat treatment;
- and
- forming a second electrode on the second plane after the performing the first heat treatment.
Dependencies are inferred from the claim text.