Semiconductor device and method for manufacturing the same
AssigneeToshiba Memory Corporation
InventorsTomoaki SAWABE, Tomomasa UEDA, Keiji IKEDA, Tsutomu TEZUKA, Nobuyoshi SAITO
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Abstract
A semiconductor device of an embodiment includes a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and extending in a first direction; a gate electrode surrounding the oxide semiconductor layer; and a first gate insulating layer provided between the gate electrode and the oxide semiconductor layer, the first gate insulating layer surrounding the oxide semiconductor layer, and the first gate insulating layer having a length in the first direction shorter than a length of the oxide semiconductor layer in the first direction.
Claims19
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- an oxide semiconductor layer provided between the first electrode and the second electrode and extending in a first direction;
- a gate electrode surrounding the oxide semiconductor layer;
- and
- a first gate insulating layer provided between the gate electrode and the oxide semiconductor layer, the first gate insulating layer surrounding the oxide semiconductor layer, and the first gate insulating layer having a length in the first direction shorter than a length of the oxide semiconductor layer in the first direction.
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- an oxide semiconductor layer provided between the first electrode and the second electrode and extending in a first direction;
- a gate electrode surrounding the oxide semiconductor layer;
- and
- a first gate insulating layer provided between the gate electrode and the oxide semiconductor layer, the first gate insulating layer surrounding the oxide semiconductor layer,
- wherein the first electrode has a first plane and a second plane opposite to the first plane, a distance between the first plane and the oxide semiconductor is smaller than a distance between the second plane and the oxide semiconductor, the first plane has a recess, and the oxide semiconductor is positioned between the recess and the second electrode and
- when a direction orthogonal to the first direction is defined as a second direction, in a cross section parallel to the first direction and including the oxide semiconductor, a distance in the second direction between portions of the gate electrode that sandwich the oxide semiconductor layer is larger than a width of the recess in the second direction.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first electrode;
- forming a first interlayer insulating film on the first electrode;
- forming a gate electrode on the first interlayer insulating film;
- forming a second interlayer insulating film on the gate electrode;
- forming an opening penetrating through the second interlayer insulating film, the gate electrode, and the first interlayer insulating film and reaching the first electrode;
- etching the gate electrode exposed on a side face of the opening in a lateral direction in a range where the gate electrode remains;
- forming a first gate insulating layer in a region where the gate electrode is etched in the lateral direction;
- embedding the opening with an oxide semiconductor layer;
- and
- forming a second electrode on the oxide semiconductor layer.
Dependencies are inferred from the claim text.