Source/drain recess etch stop layers and bottom wide-gap cap for iii-v mosfets
AssigneeIntel Corporation
InventorsCheng-Ying HUANG, Willy RACHMADY, Matthew V. METZ, Gilbert DEWEY, Jack T. KAVALIEROS, Sean T. MA, Harold KENNEL
Life of this patent
Estimating the term…
Abstract
A buffer layer is deposited on a substrate. A first III-V semiconductor layer is deposited on the buffer layer. A second III-V semiconductor layer is deposited on the first III-V semiconductor layer. The second III-V semiconductor layer comprises a channel portion and a source/drain portion. The first III-V semiconductor layer acts as an etch stop layer to etch a portion of the second III-V semiconductor layer to form the source/drain portion.
Claims21
-25. (canceled)
An electronic device comprising:
- a buffer layer on a substrate;
- a first III-V semiconductor layer on the buffer layer;
- a second III-V semiconductor layer comprising a channel portion and a source/drain portion on the first III-V semiconductor layer, wherein the first III-V semiconductor layer acts as an etch stop layer to etch a portion of the second III-V semiconductor layer to form the source/drain portion.
A data processing system comprising:
- a chip including
- an electronic device comprising
- a buffer layer on a substrate;
- a first III-V semiconductor layer on the buffer layer;
- a second III-V semiconductor layer comprising a channel portion and a source/drain portion on the first III-V semiconductor layer, wherein the first III-V semiconductor layer acts as an etch stop layer to etch a portion of the second III-V semiconductor layer to form the source/drain portion.
A method to manufacture an electronic device, comprising:
- depositing a buffer layer on a substrate;
- depositing a first III-V semiconductor layer on the buffer layer;
- and
- depositing a second III-V semiconductor layer on the first III-V semiconductor layer, wherein the first III-V semiconductor layer acts as an etch stop layer to etch a portion of the second III-V semiconductor layer to form the source/drain portion.
Dependencies are inferred from the claim text.