Silicon Carbide Semiconductor Component
AssigneeInfineon Technologies AG
InventorsLarissa Wehrhahn-Kilian, Reinhold Schoerner
Life of this patent
Estimating the term…
Abstract
A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.
Claims21
A semiconductor component, comprising:
- a SiC semiconductor body, in which a drift structure having a drift zone of a first conductivity type is formed;
- transistor cells each comprising a doping region and a source region in the SiC semiconductor body, the doping region forming a first pn junction with the drift structure and a second pn junction with the source region, the doping region being electrically connected to a first load electrode;
- and
- a diode region formed between the transistor cells and a side surface of the SiC semiconductor body, the diode region being electrically connected to the first load electrode and forming a third pn junction with the drift structure,
- wherein the diode region has a higher emitter efficiency than the doping region.
A semiconductor component comprising:
- a SiC semiconductor body, in which a drift structure having a drift zone of a first conductivity type is formed;
- a cell array area having a transistor cell, wherein the transistor cell comprises a doping region and a source region, the doping region forming a first pn junction with the drift structure and a second pn junction with the source region, the doping region being electrically connected to a first load electrode;
- and
- a diode area between the cell array area and a side surface of the SiC semiconductor body,
- wherein a diode region electrically connected to the first load electrode is formed in the diode area,
- wherein the diode region forms a third pn junction with the drift structure and has a higher emitter efficiency than the doping region.
Dependencies are inferred from the claim text.