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US 2019/0296141 A1Published application
Silicon Carbide Semiconductor Component
AssigneeInfineon Technologies AG
InventorsRoland Rupp, Larissa Wehrhahn-Kilian, Bernd Zippelius
Life of this patent
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Abstract
A semiconductor component includes a SiC semiconductor body. A drift zone of a first conductivity type and a semiconductor region are formed in the SiC semiconductor body. Barrier structures extending from the semiconductor region into the drift zone differ from the gate structures.
Claims23
A semiconductor component, comprising:
- a SiC semiconductor body in which a drift zone of a first conductivity type and a semiconductor region are formed;
- gate structures;
- and
- barrier structures extending from the semiconductor region into the drift zone, the barrier structures differing from the gate structures.
1 more element
A semiconductor diode, comprising:
- a SiC semiconductor body, in which a drift zone of a first conductivity type and a semiconductor region are formed;
- and
- barrier structures extending from the semiconductor region into the drift zone.
Dependencies are inferred from the claim text.