Transistor and Method for Manufacturing the Same

Abstract

The present application provides a transistor and a manufacturing method thereof, and can at least partially solve the problem of degraded characteristics and deteriorated reliability with use of existing transistors with a P-cap layer. The transistor includes: a channel layer and a barrier layer stacked on top of each other; and a source, a drain, and a gate spaced apart from one another on a side of the barrier layer distal to the channel layer. The gate is between the source and the drain, a P-cap layer is provided between the barrier layer and the gate, and a Schottky contact is formed between the P-cap layer and the gate. Two side edge regions of the P-cap layer respectively close to the source and the drain are two electric field modulation regions spaced apart from each other and capable of inducing positive charges under a positive gate-source voltage.

Dependencies are inferred from the claim text.