Semiconductor wafer

Abstract

A semiconductor wafer is provided, which has a silicon wafer, a reaction suppressing layer, a stress generating layer and an active layer, the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer being disposed in an order of the silicon wafer, the reaction suppressing layer, the stress generating layer and the active layer, where the reaction suppressing layer is a nitride crystal layer that suppresses reaction between silicon atoms and group-III atoms, the stress generating layer is a nitride crystal layer that generates compressive stress, the active layer is a nitride crystal layer in which an electronic device is formed, and the semiconductor wafer further has, between the silicon wafer and the reaction suppressing layer, a SiAlN layer having silicon atoms, aluminum atoms and nitrogen atoms as main constituent atoms.

Dependencies are inferred from the claim text.