Power Semiconductor Transistor

A power semiconductor transistor, comprising:

• a semiconductor body coupled to a first load terminal;
• a semiconductor drift region in the semiconductor body and having dopants of a first conductivity type;
• a plurality of first trenches extending into the semiconductor body along a vertical direction, the plurality of first trenches including a control electrode electrically insulated from the semiconductor body by an insulator;
• a plurality of second trenches extending into the semiconductor body along the vertical direction;
• a mesa region arranged between first pairs of the first and second trenches and comprising a source region electrically connected to the first load terminal, and a semiconductor channel region separating the source region from the semiconductor drift region;
• and
• a portion of a contiguous plateau region of a second conductivity type arranged in the semiconductor drift region and extending below second pairs of the first and second trenches and below the semiconductor channel region and the source region of the first pairs of the first and second trenches, the contiguous plateau region having a plurality of openings aligned below the semiconductor channel region of the first pairs of the first and second trenches in a widthwise direction of the semiconductor channel region.