Semiconductor device

A semiconductor device comprising:

• a semiconductor layer having a first plane and a second plane opposite to the first plane;
• an emitter electrode provided on a side of the first plane of the semiconductor layer;
• a collector electrode provided on a side of the second plane of the semiconductor layer;
• a first gate electrode pad provided on the side of the first plane of the semiconductor layer;
• a second gate electrode pad provided on the side of the first plane of the semiconductor layer;
• a cell region including at least one first trench provided in the semiconductor layer and a first gate electrode provided in the at least one first trench, the first gate electrode being electrically connected to the first gate electrode pad;
• and
• a cell end region including at least one second trench provided in the semiconductor layer and a second gate electrode provided in the at least one second trench, the second gate electrode being electrically connected to the second gate electrode pad, the cell end region being adjacent to the cell region.