Semiconductor device

A semiconductor device comprising:

• a semiconductor layer having a first plane and a second plane opposite to the first plane;
• a first trench provided in the semiconductor layer, the first trench extending in a first direction parallel to the first plane in the first plane;
• a first gate electrode provided in the first trench;
• a second trench provided in the semiconductor layer, the second trench extending in the first direction in the first plane;
• a second gate electrode provided in the second trench;
• a third trench provided in the semiconductor layer;
• a first resistive layer provided in the third trench;
• a first electrode provided on a side of the first plane of the semiconductor layer;
• a second electrode provided on a side of the second plane of the semiconductor layer;
• and
• a gate electrode pad provided on the side of the first plane of the semiconductor layer, the gate electrode pad being electrically connected to the first gate electrode through the first resistive layer, the gate electrode pad being electrically connected to the second gate electrode.