Method and structure of forming finfet contact

A semiconductor FET structure comprising:

• a substrate;
• a source/drain region layer of a plurality of FETs being disposed on the substrate and being adjacent to first gate stack region and second gate stack region of two respective FETs in the plurality of FETs, a source/drain contact being disposed directly on the source/drain region layer, the first gate stack region and second gate stack region including a respective first gate stack with a first gate spacer and second gate stack with a second gate spacer, the first gate spacer and the second gate spacer separating and insulating the respective first gate stack and second gate stack from adjacent respective first and second opposing sides of the source/drain contact;
• and
• the source/drain contact being disposed directly on, in direct contact with, and extending fully across a first horizontal area of a top interface surface of the source/drain region layer, and a horizontal shape of the source/drain contact continuing a shape of the first horizontal area while extending upwards to a vertical level above and directly on the source/drain region layer, the source/drain contact at the vertical level and continuing vertically upwards from the vertical level to a top surface of the source/drain contact being recessed to a limited horizontal area, the limited horizontal area of the source/drain contact contacting, and horizontally extending along, less than a full horizontal length of a vertical sidewall of each of the first gate spacer and the second gate spacer, the limited horizontal area of the source/drain contact being disposed directly on, but less than fully covering the source/drain region layer.