Systems and methods for dummy gate tie-offs in a self-aligned gate contact (sagc) cell
AssigneeQUALCOMM Incorporated
InventorsStanley Seungchul Song, Kern Rim, Da Yang, John Jianhong Zhu
Life of this patent
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Abstract
Systems and methods for dummy gate tie-offs in a self-aligned gate contact (SAGC) cell are disclosed. In particular, exemplary aspects contemplate a two-part etching process to remove hardmasks formed from different materials from adjacent elements. A metal fill material may then be used to tie off the adjacent elements. The use of the two-part etching process allows SAGC techniques to be used for a first portion of a cell while still providing a technique to allow a tie-off in a second portion of the cell. The tie-off may be used with a dummy gate to provide isolation between cells.
Claims8
A semiconductor device, comprising:
- a dummy gate;
- a source/drain region adjacent to the dummy gate;
- a source/drain hardmask coupled to a source/drain contact, the source/drain hardmask comprising a first material;
- an opening disposed above the dummy gate down to at least a portion of a top surface of the dummy gate and disposed through a portion of the source/drain hardmask down to a portion of a top surface of the source/drain contact;
- and
- a metal fill material disposed in the opening in conductive contact to at least the portion of the top surface of the dummy gate and in conductive contact to the portion of the top surface of the source/drain contact to tie off the dummy gate to the source/drain contact.
A semiconductor device, comprising:
- a dummy gate;
- a source/drain region adjacent to the dummy gate;
- a source/drain hardmask coupled to a source/drain contact, the source/drain hardmask comprising a first material;
- an opening disposed above the dummy gate down to at least a portion of a top surface of the dummy gate and disposed through a portion of the source/drain hardmask down to a portion of a top surface of the source/drain contact;
- and
- a means for filling the opening disposed in the opening in conductive contact to at least the portion of the top surface of the dummy gate and in conductive contact to the portion of the top surface of the source/drain contact to tie off the dummy gate to the source/drain contact.
8-19. (canceled)
Dependencies are inferred from the claim text.