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US 2019/0296125 A1Published application
Forming Semiconductor Devices in Silicon Carbide
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Roland Rupp, Francisco Javier Santos Rodriguez
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Abstract
A method includes providing a first layer of epitaxial silicon carbide supported by a silicon carbide substrate, providing a second layer of epitaxial silicon carbide on the first layer, forming a plurality of semiconductor devices in the second layer, and separating the substrate from the second layer at the first layer. The first layer includes a plurality of voids.
Claims42
A method, comprising:
- providing a first layer of porous silicon carbide supported by a silicon carbide substrate;
- providing a second layer of epitaxial silicon carbide on the first layer;
- forming a plurality of semiconductor devices in the second layer;
- and
- separating the substrate from the second layer at the first layer.
2 more elements
A method, comprising:
- providing a first layer of silicon carbide supported by a silicon carbide substrate;
- providing a second layer of epitaxial silicon carbide on the first layer;
- forming a plurality of semiconductor devices in the second layer;
- and
- separating the substrate from the second layer at the first layer,
- wherein the first layer comprises a plurality of voids.
3 more elements
A wafer, comprising:
- a silicon carbide substrate;
- and
- a first layer of porous silicon carbide supported by the silicon carbide substrate.
A wafer, comprising:
- a silicon carbide substrate;
- and
- a first layer of silicon carbide supported by the silicon carbide substrate,
- wherein the first layer comprises a plurality of voids.
1 more element
Dependencies are inferred from the claim text.