Dishing prevention dummy structures for semiconductor devices

An integrated circuit (IC) comprising:

• a first ring-shaped isolation structure disposed in a semiconductor substrate, wherein the first ring-shaped isolation structure demarcates a first device region;
• a second ring-shaped isolation structure disposed in the semiconductor substrate and spaced from the first ring-shaped isolation structure, wherein the second ring-shaped isolation structure demarcates a second device region;
• a first dummy gate disposed over both the first ring-shaped isolation structure and the second ring-shape isolation structure;
• and
• a second dummy gate disposed over both the first ring-shaped isolation structure and the second ring-shape isolation structure, wherein a top surface of the first dummy gate has a first area and a top surface of the second dummy gate has a second area different than the first area.

An integrated circuit (IC) comprising:

• a first isolation structure disposed in a semiconductor substrate, wherein the first isolation structure demarcates a first device region;
• a second isolation structure disposed in the semiconductor substrate and spaced from the first isolation structure, wherein the second isolation structure demarcates a second device region;
• a well region disposed in the semiconductor substrate and between the first isolation structure and the second isolation structure;
• a first dishing prevention dummy gate disposed over both the first isolation structure and the well region;
• and
• a second dishing prevention dummy gate disposed over both the second isolation structure and the well region, wherein both the first dishing prevention dummy gate and the second dishing prevention dummy gate are disposed between the first device region and the second device region.