Semiconductor device

A semiconductor device, comprising:

• a base body including a substrate, a first insulating film provided on the substrate, a first conductive film provided on the first insulating film, and a first semiconductor part provided on the first conductive film;
• a stacked body provided above the base body, the stacked body including a plurality of conductive layers and a plurality of insulating layers, the conductive layers and the insulating layers being stacked alternately;
• and
• a first columnar part provided inside the stacked body and inside the first semiconductor part, the first columnar part including a semiconductor body and a memory film, the semiconductor body extending in a stacking direction of the stacked body and being electrically connected to the first semiconductor part, the memory film including a charge trapping portion between the semiconductor body and one of conductive layers, the memory film having a first thickness in the stacked body in a first direction crossing the stacking direction,
• the semiconductor body including a contact portion, the semiconductor body contacting the first semiconductor part at the contact portion,
• the first columnar part including an insulating body provided between the first semiconductor part and the semiconductor body other than the contact portion,
• the insulating body having a second thickness in the first direction thicker than the first thickness of the memory film.

A semiconductor device, comprising:

• a base body including a substrate, a first insulating film provided on the substrate, a first conductive film provided on the first insulating film, and a semiconductor part provided on the first conductive film;
• a stacked body provided above the base body, the stacked body including a plurality of conductive layers and a plurality of insulating layers, the conductive layers and the insulating layers being stacked alternately;
• a plurality of columnar parts extending in a stacking direction of the stacked body, the plurality of columnar parts being positioned inside the stacked body, the plurality of columnar parts each including a first semiconductor body and a memory film, the first semiconductor body extending in the stacking direction, the memory film including a charge trapping portion between the first semiconductor body and one of conductive layers;
• and
• a link portion positioned inside the semiconductor part and linked to the plurality of columnar parts, the link portion including a second semiconductor body linked to the first semiconductor body in each of the plurality of columnar parts,
• the second semiconductor body extending in a direction along an upper surface of the first conductive film and being in contact with the semiconductor part.