Trench contact resistance reduction
AssigneeInternational Business Machines Corporation
InventorsZhenxing Bi, Kangguo Cheng, Juntao Li, Peng Xu
Life of this patent
Estimating the term…
Abstract
A method is presented for forming a semiconductor device. The method includes forming source/drain over a semiconductor substrate, forming a sacrificial layer over the source/drain, and forming an inter-level dielectric (ILD) layer over the sacrificial layer. The method further includes forming trenches that extend partially into the sacrificial layer, removing the sacrificial layer to expose an upper surface of the source/drain, and filling the trenches with at least one conducting material. The sacrificial layer is germanium (Ge) and the at least one conducting material includes three conducting materials.
Claims20
A semiconductor device, comprising:
- a gate with a gate dielectric formed thereon;
- spacers formed adjacent the gate;
- source/drain regions formed over a semiconductor substrate and adjacent a portion of the spacers;
- a sacrificial cap formed over the source/drain regions;
- an inter-level dielectric (ILD) layer formed over the sacrificial cap;
- and
- source/drain trenches that extend into the sacrificial cap without penetrating the source/drain regions.
A semiconductor device, comprising:
- a gate with a gate dielectric formed thereon;
- spacers formed adjacent the gate;
- source/drain regions formed over a semiconductor substrate and adjacent a portion of the spacers;
- a sacrificial cap formed over the source/drain regions;
- and
- an inter-level dielectric (ILD) layer formed over the sacrificial cap.
Dependencies are inferred from the claim text.