Semiconductor device with recessed source/drain contacts and a gate contact positioned above the active region

A device, comprising:

• a first gate structure positioned above an active region defined in a semiconducting substrate;
• a first spacer positioned adjacent said first gate structure;
• first conductive source/drain contact structures positioned adjacent said first gate structure and separated from said first gate structure by said first spacer;
• a first recessed portion of said first conductive source/drain contact structures positioned at a first axial position along said first gate structure;
• a second recessed portion of said first conductive source/drain contact structures positioned at a second axial position along said gate structure;
• a first dielectric cap layer positioned above said first and second recessed portions;
• a first conductive contact contacting said first gate structure in said first axial position, wherein said first dielectric cap layer above said first recessed portion is positioned adjacent said first conductive contact;
• a second gate structure positioned above said active region;
• a second spacer positioned adjacent said second gate structure;
• second conductive source/drain contact structures positioned adjacent said second gate structure and separated from said second gate structure by said second spacer;
• a third recessed portion of said second conductive source/drain contact structures positioned at a third axial position along said second gate structure;
• a second dielectric cap layer positioned above said third recessed portion;
• and
• a second conductive contact contacting said second gate structure in said third axial position, wherein said second dielectric cap layer above said third recessed portion is positioned adjacent said second conductive contact, and said first and third axial positions are not aligned with one another in a direction perpendicular to an axial length direction of said first and second gate structures.