Multi-spheroid beol capacitor
AssigneeInternational Business Machines Corporation
InventorsAlexander REZNICEK, Praneet ADUSUMILLI, Shanti PANCHARATNAM, Oscar VAN DER STRATEN
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Abstract
Method and apparatus for a capacitive structure. The capacitive structure includes a material stack having a deep trench formed therein. The material stack includes alternating vertical and semi-ovoid sidewall surfaces. The material stack further includes alternating metallization layers and dielectric layers. At least one of the semi-spheroidal sidewall surfaces is formed in a sidewall of at least one of the dielectric layers in the deep trench. At least one of the vertical sidewall surfaces is a sidewall surface of at least one metallization layer in the deep trench.
Claims27
A method for forming a capacitive structure, comprising:
- forming a trench having vertical sidewall surfaces and a horizontal bottom surface in a material stack, the material stack comprising alternating layers of dielectric material and metallization;
- and
- forming at least one pair of semi-spheroidal surfaces in the sidewalls of at least one of the dielectric layers, and wherein vertical sidewall surfaces are sidewall surfaces formed in at least one metallization layer in the trench.
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A capacitive structure comprising:
- a material stack having a trench formed therein, the material stack comprising alternating vertical and semi-spheroidal sidewall surfaces, wherein the material stack includes alternating metallization layers and dielectric layers, wherein at least one of the semi-spheroidal sidewall surfaces is formed in a sidewall of at least one of the dielectric layers in the trench, and wherein at least one of the vertical sidewall surfaces is a sidewall surface of at least one metallization layer in the trench.
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A semiconductor structure comprising:
- a front-of-the-line semiconductor (FEOL) circuit layer;
- and
- a back-of-the-line (BEOL) capacitor having a trench formed in a material stack comprising alternating vertical and semi-spheroidal sidewall surfaces, wherein the material stack includes alternating metallization layers and dielectric layers, wherein at least one of the semi spheroidal sidewall surfaces is formed in a sidewall of at least one of the dielectric layers in the trench, and wherein at least one of the vertical sidewall surfaces is a sidewall surface of at least one metallization layer in the trench,
- wherein the material stack overlies the FEOL circuit layer.
Dependencies are inferred from the claim text.