Methods for producing integrated circuits with magnets and a wet etchant for the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsLiang Li, Yun Ling Tan, Kai Hung Alex See, Lulu Peng, Donald Ray Disney
Life of this patent
Estimating the term…
Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower conductor element overlying a substrate, and forming a magnetic stack layer overlying the lower conductor element. A waste portion of the magnetic stack layer is removed with a wet etchant to produce a magnetic core. The wet etchant includes hydrofluoric acid, a second acid different than the hydrofluoric acid, an oxidizer, and a solvent.
Claims20
A method of producing an integrated circuit comprising:
- forming a lower conductor element overlying a substrate;
- forming a magnetic stack layer overlying the lower conductor element;
- and
- removing a waste portion of the magnetic stack layer with a wet etchant to produce a magnetic core, wherein the wet etchant comprises hydrofluoric acid, a second acid different than the hydrofluoric acid, an oxidizer, and a solvent.
A method of producing an integrated circuit comprising:
- forming a lower conductor element overlying a substrate;
- forming an etch stop layer overlying the lower conductor element;
- forming a magnetic stack layer overlying the lower conductor element;
- patterning a magnet photoresist layer overlying the magnetic stack layer;
- etching the magnetic stack layer in a single wet etch to selectively remove all of a waste portion of the magnetic stack layer to produce a magnetic core, wherein the magnetic core underlies the magnet photoresist layer, and wherein the magnet photoresist layer and the etch stop layer survive the etching of the magnetic stack layer.
A wet etchant comprising:
- hydrofluoric acid;
- a second acid different than hydrofluoric acid, wherein the second acid is selected from the group of hydrochloric acid, sulfuric acid, and combinations thereof;
- an oxidizer, wherein the oxidizer is selected from the group of hydrogen peroxide, nitric acid, and combinations thereof;
- and
- a solvent, wherein the solvent is selected from the group of water, methanol, ethanol, propanol, butanol, pentanol, ethylene glycol, propylene glycol, and combinations thereof;
- and wherein
- a hydrofluoric/solvent ratio is a ratio of a weight of the hydrofluoric acid to a weigh of the solvent in the wet etchant, and wherein the hydrofluoric/solvent ratio is from about 1:10 to about 1:200;
- and
- an oxidizer ratio is a ratio of a sum of the weight of the second acid and the oxidizer to the weight of the solvent in the wet etchant, and wherein the oxidizer ratio is from about 2:5 to about 2:100.
Dependencies are inferred from the claim text.