Storage device

A method of manufacturing a storage device, comprising:

• forming a plurality of insulating layers and a plurality of sacrifice layers provided between the plurality of insulating layers, on a first dummy transistor, a second dummy transistor, and a first transistor provided between the first dummy transistor and the second dummy transistor;
• forming a first hole on the first transistor through the plurality of insulating layers and the plurality of sacrifice layers;
• forming a recording layer within the first hole;
• forming a second conductive layer within the first hole so as to be electrically connected to the first transistor;
• forming respective second holes on the first dummy transistor and the second dummy transistor through the plurality of insulating layers and the plurality of sacrifice layers;
• removing the plurality of sacrifice layers to generate a plurality of spaces;
• forming first conductive layers in the spaces;
• and
• forming insulators within the plurality of second holes.