Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element

A method of writing information into a circuit element, the method comprising:

• applying a voltage of more than or equal to a threshold value to the circuit element to change the circuit element to an on-state;
• and
• controlling a peak current value flowing into the circuit element in the on-state and controlling a resistance value of the circuit element in an off-state to any of a plurality of states to write information into the circuit element,
• wherein the circuit element includes
• paired inert electrodes, and
• a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

A method of writing information into a circuit element, the method comprising:

• applying a voltage of more than or equal to a threshold value to the circuit element to change the circuit element to an on-state;
• and
• controlling a polarity of the voltage applied to the circuit element in the on-state and controlling a resistance value of the circuit element in an off-state to any of a plurality of states to write information into the circuit element,
• wherein the circuit element includes
• paired inert electrodes, and
• a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

A method of reading information from a circuit element, the method comprising:

• measuring a leak current in the circuit element in an off-state or a threshold voltage that changes the circuit element to an on-state;
• and
• determining in which of a plurality of states a resistance value of the circuit element in the off-state is on a basis of the measured leak current or the measured threshold voltage to read information from the circuit element,
• wherein the circuit element includes
• paired inert electrodes, and
• a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.