Photodetector and light detection and ranging
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsKoichi Kokubun, Nobu Matsumoto
Life of this patent
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Abstract
A photodetector includes: a silicon layer of a first conductivity type; a first semiconductor layer that is provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than a carrier concentration of the silicon layer; a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer; a third semiconductor layer provided in the silicon layer, of a first conductivity type, having an impurity concentration higher than that of the silicon layer, and separated from the first semiconductor layer; a first electrode connected to the silicon layer; and a second electrode connected to the second semiconductor layer.
Claims12
A photodetector, comprising:
- a silicon layer provided on a first main surface of a semiconductor substrate and of a first conductivity type;
- a first semiconductor layer provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than an impurity concentration of the silicon layer;
- a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer;
- a third semiconductor layer provided in the silicon layer, of a first conductivity type, having an impurity concentration higher than that of the silicon layer, and separated from the first semiconductor layer;
- a first electrode connected to the silicon layer;
- and
- a second electrode connected to the second semiconductor layer.
A photodetector, comprising:
- a silicon layer provided on a first main surface of a semiconductor substrate and of a first conductivity type;
- a first semiconductor layer provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than an impurity concentration of the silicon layer;
- a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer;
- an insulating layer provided in the silicon layer and separated from the first semiconductor layer;
- a first electrode connected to the silicon layer;
- and
- a second electrode connected to the second semiconductor layer.
A photodetector, comprising:
- a silicon layer provided on a first main surface of a semiconductor substrate and of a first conductivity type;
- a first semiconductor layer provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than an impurity concentration of the silicon layer;
- a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer;
- a conductive layer provided in the silicon layer and separated from the first semiconductor layer;
- a first electrode connected to the silicon layer;
- and
- a second electrode connected to the second semiconductor layer.
A photodetector, comprising:
- a silicon layer provided on a first main surface of a semiconductor substrate and of a first conductivity type;
- a first semiconductor layer provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than an impurity concentration of the silicon layer;
- a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer;
- a first electrode connected to the silicon layer;
- and
- a second electrode connected to the second semiconductor layer,
- wherein the first semiconductor layer includes a hole penetrating through the first semiconductor layer in a direction perpendicular to a boundary surface of the pn boundary.
A photodetector, comprising:
- a silicon layer provided on a first main surface of a semiconductor substrate and of a first conductivity type;
- a first semiconductor layer provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than an impurity concentration of the silicon layer;
- a second semiconductor layer that is provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer;
- a first electrode connected to the silicon layer;
- and
- a second electrode connected to the second semiconductor layer,
- wherein an impurity concentration of a central part of the first semiconductor layer is lower an impurity concentration of parts other than the central part in the first semiconductor layer.
Dependencies are inferred from the claim text.