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US 2019/0296071 A1Published application
Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Soo CHOI, Kyung Ho LEE
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Abstract
An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.
Claims19
-31. (canceled)
A image sensor including an infrared (IR) sensing region, the IR sensing region comprising:
- a substrate having a top surface and a bottom surface;
- a first boundary isolation trench having a first length from the top surface and disposed at a first boundary of the IR sensing region;
- a first boundary isolation film filling the first boundary isolation trench;
- a second boundary isolation trench having a second length from the top surface and disposed at a second boundary of the IR sensing region;
- a second boundary isolation film filling the second boundary isolation trench;
- an inner reflection pattern film having a third length from the top surface between the first boundary isolation trench and the second boundary isolation trench;
- and
- a planarizing film on the top surface,
- wherein the third length is shorter than the first length, and
- wherein the planarizing film includes a silicon nitride.
7 more elements
A image sensor including an infrared (IR) sensing region, the IR sensing region comprising:
- a substrate having a top surface and a bottom surface;
- a first boundary isolation trench having a first length from the top surface and disposed at a first boundary of the IR sensing region
- a first boundary isolation film filling the first boundary isolation trench;
- a second boundary isolation trench having a second length from the top surface and disposed at a second boundary of the IR sensing region;
- a second boundary isolation film filling the second boundary isolation trench;
- an inner reflection pattern film having a third length from the top surface between the first boundary isolation trench and the second boundary isolation trench;
- and
- a first planarizing film on the top surface,
- wherein the third length is shorter than the first length, and
- wherein the inner reflection pattern film includes a hafnium oxide.
7 more elements
Dependencies are inferred from the claim text.