Cmos pixel, image sensor, and camera and method for reading out a cmos pixel

A CMOS pixel, comprising:

• a dual conversion gain readout circuit;
• at least one first photodiode;
• a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with the aid of a second amplification factor;
• and
• at least one second photodiode, wherein:
• the diffusion region accommodates a charge of the at least one second photodiode, and
• the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor.

An image sensor, comprising:

• a CMOS pixel that includes:
• a dual conversion gain readout circuit;
• at least one first photodiode;
• a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with the aid of a second amplification factor;
• and
• at least one second photodiode, wherein:
• the diffusion region accommodates a charge of the at least one second photodiode, and
• the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor.

A camera, comprising:

• an image sensor that includes:
• a CMOS pixel that includes:
• a dual conversion gain readout circuit;
• at least one first photodiode;
• a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with the aid of a second amplification factor;
• and
• at least one second photodiode, wherein:
• the diffusion region accommodates a charge of the at least one second photodiode, and
• the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor.

A method for reading out a CMOS pixel that includes a dual conversion gain readout circuit, at least one first photodiode;

• a diffusion region having a first capacitance for accommodating a charge of the at least one first photodiode, wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of a first amplification factor and with the aid of a second amplification factor, and
• at least one second photodiode, wherein the diffusion region accommodates a charge of the at least one second photodiode, and wherein the dual conversion gain readout circuit reads out the charge of the diffusion region with the aid of at least one third amplification factor and at least one fourth amplification factor, the method comprising:
• reading out the charge of the at least one first photodiode from the diffusion region with the aid of the first amplification factor;
• reading out the charge of the at least one first photodiode from the diffusion region with the aid of the second amplification factor,
• resetting the dual conversion gain readout circuit and the first photodiode;
• reading out the charge of the at least one second photodiode from the diffusion region with the aid of the third amplification factor;
• and
• reading out the charge of the at least one second photodiode from the diffusion region with the aid of the fourth amplification factor.