US 2019/0296049 A1 · DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE

Display substrate, method for manufacturing the same and display device

AssigneesBoe Technology Group Co., Ltd., Fuzhou Boe Optoelectronics Technology Co., Ltd.

InventorsZihua ZHUANG, Xi CHEN, Jiamin LIAO, Zhendian WU, Dahai LI, Linlin LIN, Gaopan TANG, Guichun HONG, Jin WANG, Xinmao QIU, Changhong SHI, Yaochao LV, Jiarong LIU, Zongxiang LI, Hongtao LIN

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Abstract

A display substrate, a method for manufacturing the same and a display device are provided. The method includes steps of forming a common electrode line, a semiconductor pattern, and a data line on a base substrate, so that the semiconductor pattern is located between the common electrode line and the data line; and irradiating the semiconductor pattern by using light in a predetermined wavelength range from a side of the base substrate distal to the semiconductor pattern, to generate a dangling-bond defect state in a band gap of the semiconductor pattern.

Claims20

Dependent claims

A method for manufacturing a display substrate, comprising steps of

forming a common electrode line, a semiconductor pattern, and a data line on a base substrate, so that the semiconductor pattern is located between the common electrode line and the data line;
and
irradiating the semiconductor pattern by using light in a predetermined wavelength range from a side of the base substrate distal to the semiconductor pattern, to generate a dangling-bond defect state in a band gap of the semiconductor pattern.

Dependencies are inferred from the claim text.

Facts

Application

16/211,870Filed 6 Dec 2018

Priority

CN 201810251783.926 Mar 2018

Published

26 Sep 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device
H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon