Semiconductor device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorShinya ARAI
Life of this patent
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Abstract
According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.
Claims24
A semiconductor device, comprising:
- a source layer including a semiconductor layer including an impurity;
- a stacked body provided above the source layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
- a gate layer provided between the source layer and the stacked body, the gate layer being thicker than a thickness of one layer of the electrode layers;
- a semiconductor body extending in a stacking direction of the stacked body through the stacked body and the gate layer, the semiconductor body further extending in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer, the semiconductor body not contacting the electrode layers and the gate layer;
- and
- a charge storage portion provided between the semiconductor body and one of the electrode layers.
A method for manufacturing a semiconductor device, comprising:
- forming a sacrificial layer above a first semiconductor layer;
- forming a second semiconductor layer above the sacrificial layer;
- forming an insulating layer above the second semiconductor layer;
- forming a gate layer above the insulating layer, the gate layer being thicker than the second semiconductor layer;
- forming a stacked body above the gate layer, the stacked body including a plurality of first layers and a plurality of second layers, the first layers and the second layers including a first layer and a second layer stacked alternately;
- forming a semiconductor body inside a hole, the hole piercing the stacked body, the gate layer, the insulating layer, the second semiconductor layer, and the sacrificial layer;
- forming a slit after the forming of the semiconductor body, the slit piercing the stacked body, the gate layer, the insulating layer, and the second semiconductor layer and reaching the sacrificial layer;
- forming an air gap between the first semiconductor layer and the second semiconductor layer by removing the sacrificial layer through the slit;
- exposing a portion of the semiconductor body in the air gap;
- and
- forming a third semiconductor layer inside the air gap, the third semiconductor layer including an impurity and contacting the portion of the semiconductor body.
Dependencies are inferred from the claim text.