Semiconductor memory

A semiconductor memory comprising:

• first and second memory cells;
• a bit line connected to each of an end of the first memory cell and an end of the second memory cell;
• a word line connected to each of a gate of the first memory cell and a gate of the second memory cell;
• a first source line connected to another end of the first memory cell;
• and
• a second source line that is different from the first source line connected to another end of the second memory cell.

A method of manufacturing a semiconductor memory, comprising:

• forming an underlying layer;
• forming a stacked portion in which a first replacement member and a first insulator are alternately stacked above the underlying layer;
• forming first holes and second holes in a manner that the first and second holes each penetrate the stacked portion, and in which a bottom part of each is included in the underlying layer;
• after forming the first holes and the second holes, forming in the first holes a semiconductor and an insulation film surrounding an outer circumference of the semiconductor;
• and
• after forming the semiconductor and the insulation film in the first holes, removing the first replacement member via the second holes, and forming a first conductor in a space where the first replacement member was provided.