Semiconductor memory device

A semiconductor memory device comprising:

• a substrate;
• a stacked body provided on the substrate and includes a first stacked body which is formed of a plurality of stacked first electrode layers, and a second stacked body provided on the first stacked body and including at least one second electrode layer;
• a hole that passes through the first stacked body and the second stacked body in a first direction perpendicular to the substrate, the hole having a first insulator;
• and
• a semiconductor layer located between the first insulator and the first electrode layers and between the first insulator and the second electrode layer and having a first portion and a second portion which face each other, with the first insulator placed therebetween,
• wherein the first electrode layers are divided to sandwich the hole therebetween and the second electrode layer is provided radially around the hole.

A method of manufacturing a semiconductor memory device comprising:

• forming a stacked body on a substrate, the stacked body including a first stacked body formed of a plurality of stacked first electrode layers and a second stacked body provided on the first stacked body and including at least one second electrode layer;
• forming a hole that passes through the first stacked body and the second stacked body in a first direction perpendicular to the substrate and has a first insulator;
• forming a semiconductor layer between the first insulator and the first electrode layers and between the first insulator and the second electrode layer, the semiconductor layer having a first portion and a second portion which face each other, with the first insulator placed therebetween;
• dividing the first electrode layers to sandwich the hole therebetween;
• and
• forming the at least one second electrode layer so as to have an annular shape, and disposing the at least one second electrode layer so as to surround the hole.

A semiconductor memory device, comprising:

• a substrate;
• a first stacked body provided on the substrate, the first stacked body being formed of a plurality of first electrode layers;
• a second stacked body provided on the substrate, the second stacked body being formed of a plurality of second electrode layers, the plurality of second electrode layers being electrically insulated from the first electrode layers by a first insulating layer provided between the first stacked body and the second stacked body;
• a third stacked body provided on the first stacked body, the first insulating layer and the second stacked body, the third stacked body being formed of at least one third electrode layer;
• and
• a semiconductor layer passing through the third stacked body and the first insulating layer in a first direction perpendicular to the substrate.