Semiconductor memory device

A semiconductor memory device, comprising:

• a stacked body including a plurality of electrode films, the electrode films being separated one another in a first direction;
• and
• a first memory group provided in the stacked body and a second memory group provided in the stacked body,
• the first memory group including a plurality of first columnar parts, the first columnar parts extending in the first direction, and being arranged to be separated one another along a second direction crossing the first direction,
• the second memory group including a plurality of second columnar parts, the second columnar parts extending in the first direction, and being arranged to be separated one another along the second direction,
• a first portion of the electrode films being provided between the first memory group and the second memory group,
• a direction from the first memory group toward the second memory group being aligned with the second direction,
• the first columnar parts including a first proximal columnar part closest to the second memory group,
• the second columnar parts including a second proximal columnar part closest to the first memory group, and
• a pitch of the first columnar parts being shorter than a distance between a first center portion in the second direction of the first proximal columnar part and a second center portion in the second direction of the second proximal columnar part.

A semiconductor memory device, comprising:

• a stacked body including a plurality of electrode films separated one another in a first direction, one of the electrode films including a first partial region and a second partial region;
• a first insulating region provided between the first partial region and the second partial region;
• a second insulating region provided between the first partial region and the second partial region, a second direction crossing a plane including a third direction and the first direction, the second direction being from the first insulating region toward the second insulating region, the third direction being from the first partial region toward the second partial region;
• a first semiconductor member passing through a region between the first partial region and the second partial region between the first insulating region and the second insulating region, the first semiconductor member extending in the first direction;
• a second semiconductor member passing through a region between the first semiconductor member and the second partial region between the first insulating region and the second insulating region, the second semiconductor member extending in the first direction;
• a first intermediate insulating region provided between the first semiconductor member and the second semiconductor member, and contacting the first insulating region and the second insulating region;
• a first memory part provided between the first partial region and the first semiconductor member;
• and
• a second memory part provided between the second partial region and the second semiconductor member,
• a first structure body and a second structure body being provided so as to be aligned with the second direction, each of the first structure body and the second structure body including the first insulating region, the second insulating region, the first semiconductor member, the second semiconductor member, the first memory part and the second memory part,
• the one of the electrode films including a third partial region between the first structure body and the second structure body, the third partial region being continuous to the first partial region and the second partial region.