Semiconductor memory device

A semiconductor memory device comprising:

• a semiconductor substrate;
• a first insulating layer over the semiconductor substrate;
• a metal layer that includes a first wiring layer in the first insulating layer, a contact plug on the first wiring layer in the first insulating layer, and a second wiring layer on the first insulating layer and on the contact plug;
• a conductive layer on the second wiring layer;
• a second insulating layer on the conductive layer;
• a plurality of third wiring layers that are separated from each other and are stacked above the second insulating layer;
• a semiconductor layer that extends in a first direction perpendicular to the semiconductor substrate and includes a bottom surface connected to the conductive layer;
• and
• a storage portion disposed between at least one of the plurality of third wiring layers and the semiconductor layer.

A semiconductor memory device comprising:

• a semiconductor substrate;
• a first insulating layer over the semiconductor substrate;
• a metal layer that includes a projection into the first insulating layer and a first wiring layer on the first insulating layer and on the projection;
• a conductive layer on the first wiring layer;
• a second insulating layer on the conductive layer;
• a plurality of second wiring layers that are separated from each other and are stacked above the second insulating layer;
• a semiconductor layer that extends in a first direction perpendicular to the semiconductor substrate and includes a bottom surface connected to the conductive layer;
• and
• a storage portion disposed between at least one of the plurality of second wiring layers and the semiconductor layer.