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US 2019/0296015 A1Published application
Spacer for trench epitaxial structures
AssigneeInternational Business Machines Corporation
InventorsInjo OK, Balasubramanian PRANATHARTHIHARAN, Soon-Cheon SEO, Charan V.V.S. SURISETTY
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Abstract
The disclosure relates to a structure and methods of forming spacers for trench epitaxial structures. The method includes: forming a spacer material between source and drain regions of respective first-type gate structures and second-type gate structures; growing source and drain material about the first-type gate structures, confined within an area defined by the spacer material; and growing source and drain material about the second-type gate structures, confined within an area defined by the spacer material.
Claims12
A method, comprising:
- forming source and drain material confined within an area defined by a single spacer material;
- and
- subsequent to the forming the source and drain material, forming a plurality of first-type gate structures and a plurality of second-type gate structures separated from the plurality of the first-type gate structures by the single spacer material.
Dependencies are inferred from the claim text.