Highly Integrated RF Power and Power Conversion Based on Ga2O3 Technology
AssigneeGovernment of the United States as Represented by the Secretary of the Air Force
InventorGregg H Jessen
Life of this patent
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Abstract
An integrated circuit is provided including a first substrate with a first thermal conductivity. An active layer is deposited on the first substrate. At least one native device is fabricated on the active layer. A window is formed in the active layer, which exposes a portion of the first substrate. A non-native device is fabricated on a second substrate with a second thermal conductivity lower than the first thermal conductivity. The non-native device is flip-chip mounted in the widow on the first substrate and electrically connected to the at least one native device. The non-native device is also thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate.
Claims20
An integrated circuit, comprising:
- a first substrate with a first thermal conductivity;
- an active layer deposited on the first substrate;
- a first window formed in the active layer and exposing a portion of the first substrate forming a first and a second region of the active layer;
- at least one native device fabricated on the first region of the active layer;
- a first insulating region formed in the second region of the active layer via implantation;
- and
- a non-native device fabricated in a second substrate with a second thermal conductivity lower than the first thermal conductivity,
- wherein the non-native device is mounted on the second region of the active layer using a flip-chip mount and electrically connected to the at least one native device,
- wherein the non-native device adds circuit or electrical functionality to the first substrate, and
- wherein the non-native device is thermally connected to the first substrate such that heat generated by the non-native device is removed through the second region of the active layer and the first substrate.
An integrated circuit, comprising:
- a first substrate with a first thermal conductivity;
- an active layer deposited on the first substrate,
- at least one native device fabricated on the active layer;
- a first window formed in the active layer and exposing a portion of the first substrate, the first window electrically isolating a first isolated conduction region of the active layer;
- and
- a non-native device fabricated in a second substrate with a second thermal conductivity lower than the first thermal conductivity,
- wherein the non-native device adds circuit or electrical functionality to the first substrate,
- wherein the non-native device is mounted using a flip-chip mount such that at least one electrode of the non-native device is electrically connected to the first isolated conducting region and the non-native device is further electrically connected to the at least one native device, and
- wherein the non-native device is thermally connected to the first substrate such that heat generated by the non-native device is removed through the first substrate.
An integrated circuit, comprising:
- a first substrate with a first thermal conductivity;
- an active layer deposited on the first substrate;
- a first insulating region formed in the active layer via implantation forming a first and a second region of the active layer;
- at least one native device fabricated on the first region of the active layer;
- a first window formed in the second region of the active layer and exposing a portion of the first substrate;
- and
- a non-native device fabricated on a second substrate with a second thermal conductivity lower than the first thermal conductivity,
- wherein the non-native device is mounted using a flip-chip mount on the second region of the active layer and electrically connected to the at least one native device,
- wherein the non-native device adds circuit or electrical functionality to the first substrate, and
- wherein the non-native device is thermally connected to the first substrate such that heat generated by the non-native device is removed through the second region of the active layer and the first substrate.
Dependencies are inferred from the claim text.