3d integrated circuit (3dic) structure and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Chih Chiou, Chung-Shi Liu
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Abstract
An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.
Claims20
A bonded integrated circuit (IC) structure comprising:
- a first IC structure comprising a first bonding layer and a connector;
- and
- a second IC structure bonded to the first IC structure, wherein the second IC structure comprises:
- a second bonding layer bonded to and contacting the first bonding layer, wherein the connector extends past an interface between the first bonding layer and the second bonding layer;
- and
- a contact pad in the second bonding layer, wherein the contact pad contacts a lateral surface and a sidewall of the connector.
A method comprising:
- patterning a first opening in a first bonding layer of a first IC structure;
- patterning a second opening in a second bonding layer of a second IC structure;
- forming a connector in the first opening, wherein the connecter extends past a lateral surface of the first bonding layer;
- forming a contact pad on a sidewall and a bottom surface of the second opening;
- and
- bonding the first and the second IC structures, wherein bonding the first and the second IC structures comprises:
- bonding the first bonding layer to the second bonding layer;
- and
- bonding the connector to the contact pad, wherein the connector is partially disposed in the second opening.
A bonded integrated circuit (IC) structure comprising:
- a first semiconductor substrate;
- a first bonding layer over the first semiconductor substrate;
- a contact pad in the first bonding layer;
- a second bonding layer over and contacting the first bonding layer;
- a connector disposed in the first bonding layer and the second bonding layer, wherein the contact pad is disposed on a lateral surface and a sidewall of the connector;
- and
- a second semiconductor substrate over the second bonding layer.
Dependencies are inferred from the claim text.