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US 2019/0295957 A1Published application
Semiconductor device and semiconductor device manufacturing method
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsSeiji Inumiya, Kyoichi Suguro
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Abstract
A semiconductor device according to as embodiment includes a first electrode pad containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm; an electrode layer containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm; and a semiconductor layer provided between the first electrode pad and the electrode layer.
Claims17
A semiconductor device comprising:
- a first electrode pad containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm;
- an electrode layer containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm;
- and
- a semiconductor layer provided between the first electrode pad and the electrode layer.
1 more element
A semiconductor device comprising:
- a first electrode pad containing copper (Cu) as a main component, including at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (N) and having a thickness equal to or more than 5 μm and less than 50 μm;
- an electrode layer;
- and
- a semiconductor layer provided between the first electrode pad and the electrode layer.
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A semiconductor device manufacturing method comprising:
- processing a semiconductor substrate including a first plane and a second plane, a center portion of the semiconductor substrate on a side of the second plane being made thin to leave surrounding portion thick;
- forming a resist pattern on a side of the first plane;
- and
- simultaneously forming a first metal film on a side of the first plane and a second metal film on a side of the second plane by an electroplating method by using an electroplating device, the first metal film containing copper (Cu) as a main component and having a thickness equal to or more than 5 μm and less than 50 μm, and the second metal film containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm.
1 more element
Dependencies are inferred from the claim text.