Thin film resistor with punch-through vias
AssigneeTexas Instruments Incorporated
InventorsDhishan Kande, Qi-Zhong Hong, Abbas Ali, Gregory B. Shinn
Life of this patent
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Abstract
A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.
Claims13
A method, comprising:
- forming a thin film resistor (TFR) layer above a substrate;
- forming a dielectric layer above the TFR layer;
- etching a via completely through the dielectric layer and the TFR layer;
- and
- filling the via with a conductor coupled to a sidewall of the TFR layer.
A method, comprising:
- forming a first thin film resistor (TFR) layer above a substrate;
- forming a first dielectric layer above the first TFR layer;
- forming a second TFR layer above the first dielectric layer;
- forming a second dielectric layer above the second TFR layer;
- forming a first conductive via completely through the first and second dielectric layers and completely through a first terminal region of the first TFR layer;
- and
- forming a second conductive via completely through the second dielectric layer and completely through a second terminal region of the second TFR layer.
Dependencies are inferred from the claim text.